Infineon P Channel MOSFET Transistor, 20 V, 14 A, Through Hole

Specifications

Product Details

Part Number

IRF9530NPBF, IRLIB9343PBF

Maximum Drain Source Resistance

200 mΩ, 105 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

14 A

Mounting Type

Through Hole

Additional Details

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.63 x 4.83 x 9.8 mm

Maximum Drain Source Voltage

100 V, 55 V

Maximum Gate Threshold Voltage

4 V, 1 V

Maximum Power Dissipation

79 W, 33 W

Minimum Gate Threshold Voltage

2 V, 1 V

Minimum Operating Temperature

-55°C, -40°C

Package Type

TO-220AB, TO-220FP

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

58 nC @ 10 V, 31 nC @ 10 V

Typical Input Capacitance Vds

760 pF @ 25 V, 660 pF@ 50 V

Typical Turn Off Delay Time

45 ns, 21 ns

Typical Turn On Delay Time

15 ns, 9.5 ns

Quantity

Select Variants

  • Part Number : IRF9530NPBF
    Maximum Drain Source Resistance : 200 mΩ
  • Maximum Operating Temperature : +175°C
    Part Number : IRLIB9343PBF
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