
Specifications
Part Number
IRF9530NPBF, IRLIB9343PBF
Maximum Drain Source Resistance
200 mΩ, 105 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
P Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
14 A
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.63 x 4.83 x 9.8 mm
Maximum Drain Source Voltage
100 V, 55 V
Maximum Gate Threshold Voltage
4 V, 1 V
Maximum Power Dissipation
79 W, 33 W
Minimum Gate Threshold Voltage
2 V, 1 V
Minimum Operating Temperature
-55°C, -40°C
Package Type
TO-220AB, TO-220FP
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
58 nC @ 10 V, 31 nC @ 10 V
Typical Input Capacitance Vds
760 pF @ 25 V, 660 pF@ 50 V
Typical Turn Off Delay Time
45 ns, 21 ns
Typical Turn On Delay Time
15 ns, 9.5 ns
Select Variants