Infineon P Channel MOSFET Transistor, 20 V, 18 A, Surface Mount

Specifications

Product Details

Part Number

IRFR5505PBF, IRFR5505TRPBF

Maximum Drain Source Resistance

110 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

18 A

Mounting Type

Surface Mount

Additional Details

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6.73 x 6.22 x 2.39 mm

Maximum Drain Source Voltage

55 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

57 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

DPAK (TO-252)

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

32 nC @ 10 V

Typical Input Capacitance Vds

650 pF@ 25 V, 650 pF @ -25 V

Typical Turn Off Delay Time

20 ns

Typical Turn On Delay Time

12 ns

Quantity

Select Variants

  • Part Number : IRFR5505PBF
    Maximum Drain Source Resistance : 110 mΩ
  • Part Number : IRFR5505TRPBF
    Maximum Drain Source Resistance : 110 mΩ
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