
Specifications
Part Number
IRFR5505PBF, IRFR5505TRPBF
Maximum Drain Source Resistance
110 mΩ
Maximum Operating Temperature
+150°C
Brand
Infineon
Channel Type
P Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
18 A
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
6.73 x 6.22 x 2.39 mm
Maximum Drain Source Voltage
55 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
57 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
DPAK (TO-252)
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
32 nC @ 10 V
Typical Input Capacitance Vds
650 pF@ 25 V, 650 pF @ -25 V
Typical Turn Off Delay Time
20 ns
Typical Turn On Delay Time
12 ns
Select Variants