Infineon P Channel MOSFET Transistor, 20 V, 40 A, Through Hole

Part Number

IRF5210PBF

Maximum Drain Source Resistance

60 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

40 A

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.54 x 4.69 x 8.77 mm

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

200 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

TO-220AB

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

180 nC @ 10 V

Typical Input Capacitance Vds

2700 pF @ 25 V

Typical Turn Off Delay Time

79 ns

Typical Turn On Delay Time

17 ns