
Specifications
Part Number
IPB70P04P409ATMA1
Maximum Drain Source Resistance
9.4 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
P Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
72 A
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10 x 9.25 x 4.4 mm
Maximum Drain Source Voltage
40 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
75 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
D2PAK (TO-263)
Number of Elements Per Chip
1
Series
OptiMOS P
Transistor Material
Si
Typical Gate Charge at Vgs
54 nC @ 10 V
Typical Input Capacitance Vds
3700 pF @ -25 V
Typical Turn Off Delay Time
24 ns
Typical Turn On Delay Time
19 ns