Infineon P Channel MOSFET Transistor, 20 V, Surface Mount

Part Number

IRF9328TRPBF, IRF9Z24NSTRLPBF

Maximum Drain Source Resistance

19.7 mΩ, 175 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

20 V

Mounting Type

Surface Mount

Forward Diode Voltage

1.6 V

Forward Transconductance

2.5 S

Pin Count

8, 3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

5 x 4 x 1.5 mm, 10.67 x 11.3 x 4.83 mm

Maximum Drain Source Voltage

30 V, 55 V

Maximum Gate Threshold Voltage

2.4 V, 4 V

Maximum Power Dissipation

2.5 W, 45 W

Minimum Gate Threshold Voltage

1.3 V, 2 V

Minimum Operating Temperature

-55°C

Package Type

SOIC, D2PAK (TO-263)

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

18 nC @ 4.5 V, 35 nC @ 10 V, 19 nC @ 10 V

Typical Input Capacitance Vds

1680 pF @ -25 V, 350 pF @ -25 V

Typical Turn Off Delay Time

80 ns, 23 ns

Typical Turn On Delay Time

19 ns, 13 ns