Infineon P Channel MOSFET Transistor, 25 V, 40 A, Surface Mount

Part Number

BSZ086P03NS3EGATMA1, BSZ086P03NS3GATMA1

Maximum Drain Source Resistance

13.4 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

25 V

Maximum Continuous Drain Current

40 A

Mounting Type

Surface Mount

Pin Count

8

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

3.4 x 3.4 x 1.1 mm

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

1.9 V

Maximum Power Dissipation

69 W

Minimum Gate Threshold Voltage

3.1 V

Minimum Operating Temperature

-55°C

Package Type

TSDSON

Number of Elements Per Chip

1

Series

OptiMOS P

Transistor Material

Si

Typical Gate Charge at Vgs

43.2 nC @ 10 V

Typical Input Capacitance Vds

3190 pF @ -15 V

Typical Turn Off Delay Time

35 ns

Typical Turn On Delay Time

16 ns