ON Semiconductor 2N5551TF Bipolar Transistor, Through Hole

Brand

ON Semiconductor

Part Number

2N5551TF

Transistor Type

NPN

Maximum Operating Frequency

100 MHz

Maximum Operating Temperature

+150°C

Maximum Power Dissipation

625 mW

Mounting Type

Through Hole

Pin Count

3

Dimensions

5.2 x 4.19 x 5.33 mm

Maximum Base Emitter Saturation Voltage

1 V

Maximum Collector Base Voltage

180 V

Maximum Collector Emitter Saturation Voltage

0.20 V

Maximum Collector Emitter Voltage

160 V

Maximum DC Collector Current

600 mA

Maximum Emitter Base Voltage

6 V

Minimum DC Current Gain

80

Minimum Operating Temperature

-50°C

Number of Elements per Chip

1

Package Type

TO-92

Transistor Configuration

Single