ON Semiconductor HGT1S10N120BNST IGBT Transistor, Surface Mount

Brand

ON Semiconductor

Part Number

HGT1S10N120BNST

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Channel Type

N

Dimensions

10.67 x 11.33 x 4.83 mm

Maximum Collector Emitter Voltage

1200 V

Maximum Continuous Collector Current

80 A

Maximum Gate Emitter Voltage

±20 V

Maximum Operating Temperature

+150°C

Maximum Power Dissipation

298 W

Minimum Operating Temperature

-55°C

Package Type

D2PAK (TO-263)

Switching Speed

1 MHz