ON Semiconductor HGTG30N60B3 IGBT Transistor, Through Hole

Brand

ON Semiconductor

Part Number

HGTG30N60B3

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Channel Type

N

Dimensions

15.87 x 4.82 x 20.82 mm

Maximum Collector Emitter Voltage

600 V

Maximum Continuous Collector Current

60 A

Maximum Gate Emitter Voltage

±20 V

Maximum Operating Temperature

+150°C

Maximum Power Dissipation

208 W

Minimum Operating Temperature

-55°C

Package Type

TO-247

Switching Speed

1 MHz