ON Semiconductor NGTB20N120IHWG IGBT Transistor, Through Hole

Brand

ON Semiconductor

Part Number

NGTB20N120IHWG

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Channel Type

N

Dimensions

16.25 x 5.3 x 21.4 mm

Gate Capacitance

3590 pF

Maximum Collector Emitter Voltage

1200 V

Maximum Continuous Collector Current

40 A

Maximum Gate Emitter Voltage

±20 V

Maximum Operating Temperature

+175°C

Maximum Power Dissipation

341 W

Minimum Operating Temperature

-40°C

Package Type

TO-247

Switching Speed

1 MHz

Energy Rating

0.92 mJ