
Specifications
Part Number
STW56N65DM2
Maximum Drain Source Resistance
65 mΩ
Maximum Operating Temperature
+150°C
Brand
STMicroelectronics
Channel Type
N Channel
Maximum Gate Source Voltage
25 V
Maximum Continuous Drain Current
48 A
Mounting Type
Through Hole
Forward Diode Voltage
1.6 V
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
15.75 x 5.15 x 20.15 mm
Maximum Drain Source Voltage
650 V
Maximum Gate Threshold Voltage
5 V
Maximum Power Dissipation
360 W
Minimum Gate Threshold Voltage
3 V
Minimum Operating Temperature
-55°C
Package Type
TO-247
Number of Elements Per Chip
1
Series
MDmesh DM2
Transistor Material
Si
Typical Gate Charge at Vgs
88 nC @ 10 V
Typical Input Capacitance Vds
4100 pF @ 100 V
Typical Turn Off Delay Time
157 ns
Typical Turn On Delay Time
28 ns