STMicroelectronics N Channel MOSFET Transistor, 25 V, 48 A, Through Hole

Specifications

Product Details

Part Number

STW56N65DM2

Maximum Drain Source Resistance

65 mΩ

Maximum Operating Temperature

+150°C

Brand

STMicroelectronics

Channel Type

N Channel

Maximum Gate Source Voltage

25 V

Maximum Continuous Drain Current

48 A

Mounting Type

Through Hole

Additional Details

Forward Diode Voltage

1.6 V

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

15.75 x 5.15 x 20.15 mm

Maximum Drain Source Voltage

650 V

Maximum Gate Threshold Voltage

5 V

Maximum Power Dissipation

360 W

Minimum Gate Threshold Voltage

3 V

Minimum Operating Temperature

-55°C

Package Type

TO-247

Number of Elements Per Chip

1

Series

MDmesh DM2

Transistor Material

Si

Typical Gate Charge at Vgs

88 nC @ 10 V

Typical Input Capacitance Vds

4100 pF @ 100 V

Typical Turn Off Delay Time

157 ns

Typical Turn On Delay Time

28 ns

Get Best Price>>