
Specifications
Part Number
STB3NK60ZT4
Maximum Drain Source Resistance
3.6 Ω
Maximum Operating Temperature
+150°C
Brand
STMicroelectronics
Channel Type
N Channel
Maximum Gate Source Voltage
30 V
Maximum Continuous Drain Current
2.4 A
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.75 x 10.4 x 4.6 mm
Maximum Drain Source Voltage
600 V
Maximum Gate Threshold Voltage
4.5 V
Maximum Power Dissipation
45 W
Minimum Gate Threshold Voltage
3 V
Minimum Operating Temperature
-55°C
Package Type
D2PAK (TO-263)
Number of Elements Per Chip
1
Series
MDmesh,SuperMESH
Transistor Material
Si
Typical Gate Charge at Vgs
11.8 nC @ 10 V
Typical Input Capacitance Vds
311 pF @ 25 V
Typical Turn Off Delay Time
19 ns
Typical Turn On Delay Time
9 ns