
Specifications
Part Number
STF13N80K5, STF15N95K5, STP12NM50, STP12NM50FP, STP13N80K5, STP15N95K5
Maximum Drain Source Resistance
450 mΩ, 500 mΩ, 350 mΩ
Maximum Operating Temperature
+150°C
Brand
STMicroelectronics
Channel Type
N Channel
Maximum Gate Source Voltage
30 V
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.6 x 4.6 x 16.4 mm, 10.4 x 4.6 x 16.4 mm, 10.4 x 4.6 x 9.15 mm, 10.4 x 4.6 x 9.3 mm, 10.4 x 4.6 x 15.75 mm
Maximum Drain Source Voltage
800 V, 950 V, 500 V
Maximum Gate Threshold Voltage
5 V
Maximum Power Dissipation
35 W, 30 W, 160 W, 190 W, 170 W
Minimum Gate Threshold Voltage
3 V
Minimum Operating Temperature
-55°C, -65°C
Package Type
TO-220FP, TO-220
Number of Elements Per Chip
1
Series
MDmesh K5,SuperMESH5, MDmesh
Transistor Material
Si
Typical Gate Charge at Vgs
29 nC @ 10 V, 30 nC @ 10 V, 28 nC @ 10 V
Typical Input Capacitance Vds
870 pF @ 100 V, 855 pF @ 100 V, 1000 pF @ 25 V
Typical Turn Off Delay Time
42 ns, 62 ns
Typical Turn On Delay Time
16 ns, 20 ns
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