Toshiba GT50MR21,Q(O IGBT Transistor, Through Hole

Brand

Toshiba

Part Number

GT50MR21,Q(O

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Channel Type

N

Dimensions

15.5 x 4.5 x 20 mm

Gate Capacitance

1500 pF

Maximum Collector Emitter Voltage

900 V

Maximum Continuous Collector Current

50 A

Maximum Gate Emitter Voltage

±25 V

Maximum Operating Temperature

+175°C

Maximum Power Dissipation

230 W

Package Type

TO-3P

Switching Speed

0.4 µs