Toshiba N Channel MOSFET Transistor, 12 V, 3.5 A, Surface Mount

Part Number

SSM3K329R

Maximum Drain Source Resistance

289 mΩ

Maximum Operating Temperature

+150°C

Brand

Toshiba

Channel Type

N Channel

Maximum Gate Source Voltage

12 V

Maximum Continuous Drain Current

3.5 A

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Channel Mode

Enhancement

Dimensions

2.9 x 1.8 x 0.7 mm

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

1 V

Maximum Power Dissipation

2 W

Minimum Gate Threshold Voltage

0.4 V

Package Type

SOT-23F

Number of Elements Per Chip

1

Typical Gate Charge at Vgs

1.5 nC @ 4 V

Typical Input Capacitance Vds

123 pF @ 15 V

Typical Turn Off Delay Time

6.4 ns

Typical Turn On Delay Time

9.2 ns