Toshiba N Channel MOSFET Transistor, 20 V, 37 A, Surface Mount

Part Number

TPN11006NL,LQ, TPN8R903NL,LQ

Maximum Drain Source Resistance

17 mΩ, 12.7 mΩ

Maximum Operating Temperature

+150°C

Brand

Toshiba

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

37 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.2 V

Pin Count

8

Transistor Configuration

Single

Category

Switching Regulator MOSFET

Channel Mode

Enhancement

Dimensions

3.1 x 3.1 x 0.85 mm

Maximum Drain Source Voltage

60 V, 30 V

Maximum Gate Threshold Voltage

2.5 V, 2.3 V

Maximum Power Dissipation

30 W, 22 W

Minimum Gate Threshold Voltage

1.5 V, 1.3 V

Package Type

TSON

Number of Elements Per Chip

1

Series

U-MOSVIII-H

Transistor Material

Si

Typical Gate Charge at Vgs

23 nC @ 10 V, 9.8 nC @ 10 V

Typical Input Capacitance Vds

1500 pF @ 30 V, 630 pF @ 15 V

Typical Turn Off Delay Time

27 ns, 14 ns

Typical Turn On Delay Time

11 ns, 8.3 ns