Toshiba N Channel MOSFET Transistor, 30 V, 10 A, Through Hole

Part Number

2SK2601(F), TK10A60D,S5Q, TK10A80E,S4X, TK10J80E

Maximum Drain Source Resistance

1 Ω, 750 mΩ

Maximum Operating Temperature

+150°C

Brand

Toshiba

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

10 A

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

15.9 X 20 4.8 mm, 10 x 4.5 x 15 mm, 15.5 x 4.5 x 20 mm

Maximum Drain Source Voltage

500 V, 600 V, 800 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

125 W, 45 W, 50 W, 250 W

Package Type

SC-65, SC-67, TO-220SIS, TO-3PN

Number of Elements Per Chip

1

Series

TK

Transistor Material

Si

Typical Gate Charge at Vgs

30 nC @ 10 V, 25 nC @ 10 V, 46 nC @ 10 V

Typical Input Capacitance Vds

1200 pF @ 10 V, 1350 pF @ 25 V, 2000 pF @ 25 V

Typical Turn Off Delay Time

180 ns, 100 ns, 140 ns

Typical Turn On Delay Time

50 ns, 55 ns, 80 ns