
Specifications
Part Number
IRLL110TRPBF
Maximum Drain Source Resistance
760 mΩ
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
N Channel
Maximum Gate Source Voltage
10 V
Maximum Continuous Drain Current
1.5 A
Mounting Type
Surface Mount
Pin Count
3+Tab
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
6.7 x 3.7 x 1.8 mm
Maximum Drain Source Voltage
100 V
Maximum Power Dissipation
3.1 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
SOT-223
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
6.1 nC @ 5 V
Typical Input Capacitance Vds
250 pF@ 25 V
Typical Turn Off Delay Time
16 ns
Typical Turn On Delay Time
9.3 ns