Vishay N Channel MOSFET Transistor, 16 V, 30 A, Surface Mount

Part Number

SiZ350DT-T1-GE3

Maximum Drain Source Resistance

9 mΩ

Maximum Operating Temperature

+150°C

Brand

Vishay

Channel Type

N Channel

Maximum Gate Source Voltage

16 V

Maximum Continuous Drain Current

30 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.2 V

Forward Transconductance

46 S

Pin Count

8

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

3 x 3 x 0.75 mm

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

1 V

Maximum Power Dissipation

16.7 W

Minimum Gate Threshold Voltage

2.4 V

Minimum Operating Temperature

-55°C

Package Type

PowerPAIR 3 x 3

Number of Elements Per Chip

2

Series

TrenchFET

Transistor Material

Si

Typical Gate Charge at Vgs

13.5 nC @ 10 V

Typical Input Capacitance Vds

940 pF @ 15 V

Typical Turn Off Delay Time

15 ns

Typical Turn On Delay Time

15 ns