Vishay N Channel MOSFET Transistor, 20 V, 1.8 A, Through Hole

Part Number

IRFBE20PBF

Maximum Drain Source Resistance

6.5 Ω

Maximum Operating Temperature

+150°C

Brand

Vishay

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

1.8 A

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.41 x 4.7 x 9.01 mm

Maximum Drain Source Voltage

800 V

Maximum Power Dissipation

54 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

TO-220AB

Number of Elements Per Chip

1

Transistor Material

Si

Typical Gate Charge at Vgs

38 nC @ 10 V

Typical Input Capacitance Vds

530 pF@ 25 V

Typical Turn Off Delay Time

58 ns

Typical Turn On Delay Time

8.2 ns