Vishay N Channel MOSFET Transistor, 20 V, 1.9 A, Surface Mount
Specifications
Product Details
Part Number
SI2308BDS-T1-GE3
Maximum Drain Source Resistance
156 mΩ
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
1.9 A
Mounting Type
Surface Mount
Additional Details
Forward Diode Voltage
1.2 V
Forward Transconductance
5 S
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
3.04 x 1.4 x 1.02 mm
Maximum Drain Source Voltage
60 V
Maximum Power Dissipation
1.09 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
SOT-23 (TO-236)
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
2.3 nC @ 4.5 V, 4.5 nC @ 10 V
Typical Input Capacitance Vds
190 pF @ 30 V
Typical Turn Off Delay Time
11 ns
Typical Turn On Delay Time
15 ns