Vishay N Channel MOSFET Transistor, 20 V, 2.5 A, Through Hole

Part Number

IRF820PBF, IRFD024PBF, SIHF820L-GE3

Maximum Drain Source Resistance

3 Ω, 100 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Vishay

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

2.5 A

Mounting Type

Through Hole

Pin Count

3, 4

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.41 x 4.7 x 9.01 mm, 5 x 6.29 x 3.37 mm, 10.51 x 4.65 x 15.49 mm

Maximum Drain Source Voltage

500 V, 60 V

Maximum Power Dissipation

50 W, 1.3 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

TO-220AB, HVMDIP

Number of Elements Per Chip

1

Transistor Material

Si

Typical Gate Charge at Vgs

24 nC @ 10 V, 25 nC @ 10 V

Typical Input Capacitance Vds

360 pF@ 25 V, 640 pF @ 25 V, 360 pF @ 25 V

Typical Turn Off Delay Time

33 ns, 25 ns

Typical Turn On Delay Time

8 ns, 13 ns