
Specifications
Part Number
IRF540PBF
Maximum Drain Source Resistance
77 mΩ
Maximum Operating Temperature
+175°C
Brand
Vishay
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
28 A
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.41 x 4.7 x 9.01 mm
Maximum Drain Source Voltage
100 V
Maximum Power Dissipation
150 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
TO-220AB
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
72 nC @ 10 V
Typical Input Capacitance Vds
1700 pF@ 25 V
Typical Turn Off Delay Time
53 ns
Typical Turn On Delay Time
11 ns