
Specifications
Part Number
IRFR1N60ATRPBF
Maximum Drain Source Resistance
7 Ω
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
N Channel
Maximum Gate Source Voltage
30 V
Maximum Continuous Drain Current
1.4 A
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
6.73 x 6.22 x 2.38 mm
Maximum Drain Source Voltage
600 V
Maximum Power Dissipation
36 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
DPAK (TO-252)
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
14 nC @ 10 V
Typical Input Capacitance Vds
229 pF @ 25 V
Typical Turn Off Delay Time
18 ns
Typical Turn On Delay Time
98 ns