Vishay N Channel MOSFET Transistor, 30 V, 70 A, Through Hole
Specifications
Product Details
Part Number
SiHG70N60EF-GE3
Maximum Drain Source Resistance
38 mΩ
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
N Channel
Maximum Gate Source Voltage
30 V
Maximum Continuous Drain Current
70 A
Mounting Type
Through Hole
Additional Details
Forward Diode Voltage
1.2 V
Forward Transconductance
25 S
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
15.87 x 5.31 x 20.82 mm
Maximum Drain Source Voltage
600 V
Maximum Power Dissipation
520 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
TO-247AC
Number of Elements Per Chip
1
Series
EFSeries
Transistor Material
Si
Typical Gate Charge at Vgs
253 nC @ 10 V
Typical Input Capacitance Vds
7500 pF @ 100 V
Typical Turn Off Delay Time
257 ns
Typical Turn On Delay Time
56 ns