
Specifications
Part Number
SI1050X-T1-GE3
Maximum Drain Source Resistance
120 mΩ
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
N Channel
Maximum Gate Source Voltage
5 V
Maximum Continuous Drain Current
1.34 A
Mounting Type
Surface Mount
Pin Count
6
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
1.7 x 1.2 x 0.6 mm
Maximum Drain Source Voltage
8 V
Maximum Power Dissipation
236 mW
Minimum Gate Threshold Voltage
0.35 V
Minimum Operating Temperature
-55°C
Package Type
SOT-523 (SC-89)
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
7.7 nC @ 5 V
Typical Input Capacitance Vds
585 pF @ 4 V
Typical Turn Off Delay Time
25 ns
Typical Turn On Delay Time
6.8 ns