Vishay N Channel MOSFET Transistor, 8 V, 1.3 A, Surface Mount

Part Number

SI1922EDH-T1-GE3

Maximum Drain Source Resistance

263 mΩ

Maximum Operating Temperature

+150°C

Brand

Vishay

Channel Type

N Channel

Maximum Gate Source Voltage

8 V

Maximum Continuous Drain Current

1.3 A

Mounting Type

Surface Mount

Pin Count

6

Transistor Configuration

Isolated

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

2.2 x 1.35 x 1 mm

Maximum Drain Source Voltage

20 V

Maximum Power Dissipation

1.25 W

Minimum Gate Threshold Voltage

0.4 V

Minimum Operating Temperature

-55°C

Package Type

SOT-363 (SC-88)

Number of Elements Per Chip

2

Transistor Material

Si

Typical Gate Charge at Vgs

1.6 nC @ 8 V

Typical Turn Off Delay Time

645 ns

Typical Turn On Delay Time

43 ns