Vishay N Channel MOSFET Transistor, 8 V, 8 A, Surface Mount

Part Number

SI3464DV-T1-GE3, SQ3460EV-T1-GE3

Maximum Drain Source Resistance

30 mΩ, 53 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Vishay

Channel Type

N Channel

Maximum Gate Source Voltage

8 V

Maximum Continuous Drain Current

8 A

Mounting Type

Surface Mount

Pin Count

6

Transistor Configuration

Single

Automotive Standard

AEC-Q101

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

3.1 x 1.7 x 1 mm

Maximum Drain Source Voltage

20 V

Maximum Power Dissipation

3.6 W

Minimum Gate Threshold Voltage

0.45 V, 0.4 V

Minimum Operating Temperature

-55°C

Package Type

TSOP

Number of Elements Per Chip

1

Series

SQ Rugged

Transistor Material

Si

Typical Gate Charge at Vgs

12 nC @ 8 V, 9.3 nC @ 4.5 V

Typical Input Capacitance Vds

1065 pF @ 10 V, 848 pF @ 10 V

Typical Turn Off Delay Time

43 ns, 21 ns

Typical Turn On Delay Time

5 ns, 8 ns