
Specifications
Part Number
SI1553CDL-T1-GE3
Maximum Drain Source Resistance
1.48 Ω, 578 mΩ
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
N Channel, P Channel
Maximum Gate Source Voltage
12 V
Maximum Continuous Drain Current
700 mA
Mounting Type
Surface Mount
Pin Count
6
Transistor Configuration
Isolated
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
2.2 x 1.35 x 1 mm
Maximum Drain Source Voltage
20 V
Maximum Power Dissipation
340 mW
Minimum Gate Threshold Voltage
0.6 V
Minimum Operating Temperature
-55°C
Package Type
SOT-363 (SC-88)
Number of Elements Per Chip
2
Transistor Material
Si
Typical Gate Charge at Vgs
1.2 nC @ 10 V, 1.9 nC @ 10 V
Typical Input Capacitance Vds
38 pF@ 10 V, 43 pF@ -10 V
Typical Turn Off Delay Time
12 ns, 22 ns
Typical Turn On Delay Time
15 ns, 16 ns