Vishay P Channel MOSFET Transistor, 12 V, Surface Mount

Part Number

SIA445EDJ-T1-GE3

Maximum Drain Source Resistance

30 mΩ

Maximum Operating Temperature

+150°C

Brand

Vishay

Channel Type

P Channel

Maximum Gate Source Voltage

12 V

Mounting Type

Surface Mount

Pin Count

6

Transistor Configuration

Single

Channel Mode

Enhancement

Dimensions

1.7 x 1.7 x 0.8 mm

Maximum Drain Source Voltage

20 V

Maximum Power Dissipation

19 W

Minimum Gate Threshold Voltage

0.5 V

Minimum Operating Temperature

-55°C

Package Type

PowerPAKSC-70

Number of Elements Per Chip

1

Transistor Material

Si

Typical Gate Charge at Vgs

23 nC @ 4.5 V

Typical Input Capacitance Vds

2130 pF @ -10 V

Typical Turn Off Delay Time

60 ns

Typical Turn On Delay Time

25 ns