
Specifications
Part Number
SI9407BDY-T1-GE3
Maximum Drain Source Resistance
150 mΩ
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
P Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
3.8 A
Mounting Type
Surface Mount
Pin Count
8
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
5 x 4 x 1.55 mm
Maximum Drain Source Voltage
60 V
Maximum Power Dissipation
5 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
SOIC
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
14.5 nC @ 10 V
Typical Input Capacitance Vds
600 pF @ -30 V
Typical Turn Off Delay Time
40 ns
Typical Turn On Delay Time
30 ns