Vishay P Channel MOSFET Transistor, 20 V, 4.7 A, Surface Mount

Part Number

SI2343CDS-T1-GE3, SIHF9Z14S-GE3

Maximum Drain Source Resistance

75 mΩ, 500 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Vishay

Channel Type

P Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

4.7 A

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

3.04 x 1.4 x 1.02 mm, 10.67 x 9.65 x 4.83 mm

Maximum Drain Source Voltage

30 V, 60 V

Maximum Power Dissipation

2.5 W, 43 W

Minimum Gate Threshold Voltage

1.2 V, 2 V

Minimum Operating Temperature

-55°C

Package Type

SOT-23 (TO-236), D2PAK (TO-263)

Number of Elements Per Chip

1

Transistor Material

Si

Typical Gate Charge at Vgs

13.6 nC @ 10 V, 12 nC @ 10 V

Typical Input Capacitance Vds

590 pF @ -15 V, 270 pF @ -25 V

Typical Turn Off Delay Time

18 ns, 10 ns

Typical Turn On Delay Time

30 ns, 11 ns