Vishay P Channel MOSFET Transistor, 8 V, 13.4 A, Surface Mount
Specifications
Product Details
Part Number
SI4403CDY-T1-GE3
Maximum Drain Source Resistance
20 mΩ
Maximum Operating Temperature
+150°C
Brand
Vishay
Channel Type
P Channel
Maximum Gate Source Voltage
8 V
Maximum Continuous Drain Current
13.4 A
Mounting Type
Surface Mount
Additional Details
Forward Diode Voltage
1.2 V
Forward Transconductance
40 S
Pin Count
8
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
5 x 4 x 1.55 mm
Maximum Drain Source Voltage
20 V
Maximum Gate Threshold Voltage
1 V
Maximum Power Dissipation
5 W
Minimum Gate Threshold Voltage
0.4 V
Minimum Operating Temperature
-55°C
Package Type
SOIC
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
60 nC @ 8 V
Typical Input Capacitance Vds
2380 pF @ -10 V
Typical Turn Off Delay Time
108 ns
Typical Turn On Delay Time
14 ns